RB751V-40 5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 RB751V -40 Schottky Barrier Diode FEATURES z Low current rectifier schottky diode z Low voltage, low inductance z For power supply MAKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 0.03 A IFSM 0.2 A PD 200 mW RθJA 500 ℃/W Tj 125 ℃ Tstg -55~+150 ℃ Peak forward surge current Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min Typ VF IR CT 2 Max Unit Conditions 0.37 V IF=1mA 0.5 μA VR=30V pF VR=1V, f=1MHZ &,Aug,2012 Typical Characteristics Forward Characteristics Reverse Characteristics 100 Ta=100℃ (uA) 10 10 Ta=100℃ REVERSE CURRENT IR FORWARD CURRENT IF (mA) 100 RB751V-40 Ta=25℃ 1 0.1 1 0.1 Ta=25℃ 0.01 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 1E-3 1.0 5 10 15 20 25 REVERSE VOLTAGE Capacitance Characteristics 4 0 VF (V) 30 VR 35 40 (V) Power Derating Curve 250 Ta=25℃ (mW) 200 PD 3 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 2 1 150 100 50 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) C,Aug,2012